发明名称 Multi-voltage level, multi-dynamic circuit structure device
摘要 In a particular embodiment, a method includes discharging a first dynamic node at a first discharge circuit of a first dynamic circuit structure in response to receiving an asserted discharge signal. The first dynamic circuit structure includes the first dynamic node at a first voltage level and a first keeper circuit that is disabled when the asserted discharge signal is received. The asserted discharge signal has a second voltage level that is different from the first voltage level. A second keeper circuit of a second dynamic circuit structure is enabled responsive to discharging the first dynamic node to maintain a second dynamic node of the second dynamic circuit structure at the first voltage level.
申请公布号 US8406077(B2) 申请公布日期 2013.03.26
申请号 US20100828719 申请日期 2010.07.01
申请人 LIN JENTSUNG KEN;QUALCOMM INCORPORATED 发明人 LIN JENTSUNG KEN
分类号 G11C8/00 主分类号 G11C8/00
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