METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND PROGRAM

摘要

PROBLEM TO BE SOLVED: To improve productivity by improving uniformity in film thickness of an insulating film having a structure in which oxide films and nitride films are stacked.

SOLUTION: The method comprises forming a stacked film having oxide films and nitride films stacked therein on a substrate by alternately repeating a predetermined number of times: a process of forming the oxide film by repeating a predetermined number of times a cycle comprising supplying a source gas, supplying a nitriding gas and supplying an oxidizing gas to the substrate in a processing container; and a process of forming the nitride film by repeating a predetermined number of times a cycle comprising supplying the source gas and supplying the nitriding gas to the substrate in the processing container. The processes of forming the oxide film and forming the nitride film are consecutively performed while keeping a temperature of the substrate constant.

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