发明名称 |
RADIATION HARDENED INTEGRATED CIRCUIT |
摘要 |
A method of forming an integrated circuit (IC) includes providing a substrate having a topside semiconductor surface, wherein the topside semiconductor surface includes at least one of N+ buried layer regions and P+ buried layer regions. An epitaxial layer is grown on the topside semiconductor surface. Pwells are formed in the epitaxial layer. Nwells are formed in the epitaxial layer. NMOS devices are formed in and over the pwells, and PMOS devices are formed in and over the nwells.
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申请公布号 |
US2013105904(A1) |
申请公布日期 |
2013.05.02 |
申请号 |
US201113286293 |
申请日期 |
2011.11.01 |
申请人 |
ROYBAL RICHARD G.;ARSHAD SHARIQ;TANG SHAOPING;SALZMAN JAMES FRED;TEXAS INSTRUMENTS INCORPORATED |
发明人 |
ROYBAL RICHARD G.;ARSHAD SHARIQ;TANG SHAOPING;SALZMAN JAMES FRED |
分类号 |
H01L27/092;H01L21/8238 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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