发明名称 |
Methods of Epitaxially Forming Materials on Transistor Devices |
摘要 |
Disclosed herein are various methods of epitaxially forming materials on transistor devices. In one example, the method includes forming an isolation region in a semiconducting substrate that defines an active area, performing a heating process on the active area to cause an upper surface of the active area to become a curved surface and performing an etching process on the active area to define a recess having a curved bottom surface. The method further includes the steps of forming a channel semiconductor material in the recess with a curved upper surface and forming a gate structure for a transistor above the curved upper surface of the channel semiconductor material. |
申请公布号 |
US2013105917(A1) |
申请公布日期 |
2013.05.02 |
申请号 |
US201113287466 |
申请日期 |
2011.11.02 |
申请人 |
KRONHOLZ STEPHAN;THEES HANS-JUERGEN;JAVORKA PETER;GLOBALFOUNDRIES INC. |
发明人 |
KRONHOLZ STEPHAN;THEES HANS-JUERGEN;JAVORKA PETER |
分类号 |
H01L29/772;H01L21/336 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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