| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a display device which can reduce luminance unevenness. <P>SOLUTION: A display device manufacturing method comprises a step of forming a thin-film transistor having an oxide semiconductor layer on a substrate, and a step of forming a display region consisting of a plurality of display elements on an upper layer of the thin-film transistor. The step of forming the oxide semiconductor layer is carried out by a sputtering method while a target consisting of an oxide semiconductor having a plurality of split parts joined together in planar form and the substrate are arranged to face each other, in which the interval between two mutually parallel joins in the target is made to be equal to or less than the width of luminance distribution occurring in the display region in a direction intersecting the joins at right angles. <P>COPYRIGHT: (C)2013,JPO&INPIT |
