发明名称 |
INTEGRATED CIRCUIT DEVICE INCLUDING THROUGH-SILICON VIA STRUCTURE HAVING OFFSET INTERFACE |
摘要 |
An integrated circuit device includes a substrate through which a first through-hole extends, and an interlayer insulating film on the substrate, the interlayer insulating film having a second through-hole communicating with the first through-hole. A Through-Silicon Via (TSV) structure is provided in the first through-hole and the second through-hole. The TSV structure extends to pass through the substrate and the interlayer insulating film. The TSV structure comprises a first through-electrode portion having a top surface located in the first through-hole, and a second through-electrode portion having a bottom surface contacting with the top surface of the first through-electrode portion and extending from the bottom surface to at least the second through-hole. Related fabrication methods are also described.
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申请公布号 |
US2013119547(A1) |
申请公布日期 |
2013.05.16 |
申请号 |
US201213603978 |
申请日期 |
2012.09.05 |
申请人 |
KIM SU-KYOUNG;CHOI GIL-HEYUN;PARK BYUNG-IYUL;MOON KWANG-JIN;PARK KUN-SANG;LIM DONG-CHAN;LEE DO-SUN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM SU-KYOUNG;CHOI GIL-HEYUN;PARK BYUNG-IYUL;MOON KWANG-JIN;PARK KUN-SANG;LIM DONG-CHAN;LEE DO-SUN |
分类号 |
H01L23/532;H01L23/498 |
主分类号 |
H01L23/532 |
代理机构 |
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代理人 |
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地址 |
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