发明名称 INTEGRATED CIRCUIT SYSTEM EMPLOYING AN ELEVATED DRAIN
摘要 <p>INTEGRATED CIRCUIT SYSTEM EMPLOYING AN ELEVATED DRAINA method for manufacturing an integrated circuit system that includes; substrate ineluding an active device; forming a drill region in the substrate, the drift region bounded in part by a top surface of the substrate and spaced apart from a source; and forming a drain above the rift region;</p>
申请公布号 SG190495(A1) 申请公布日期 2013.06.28
申请号 SG20120052858 申请日期 2009.10.21
申请人 GLOBALFOUNDRIES SINGAPORE PTE. LTD. 发明人 ZHANG GUOWEI;LI YISUO;LI MING;PURAKH RAJ VERMA;SANFORD CHU SHAO-FU
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