发明名称 |
INTEGRATED CIRCUIT SYSTEM EMPLOYING AN ELEVATED DRAIN |
摘要 |
<p>INTEGRATED CIRCUIT SYSTEM EMPLOYING AN ELEVATED DRAINA method for manufacturing an integrated circuit system that includes; substrate ineluding an active device; forming a drill region in the substrate, the drift region bounded in part by a top surface of the substrate and spaced apart from a source; and forming a drain above the rift region;</p> |
申请公布号 |
SG190495(A1) |
申请公布日期 |
2013.06.28 |
申请号 |
SG20120052858 |
申请日期 |
2009.10.21 |
申请人 |
GLOBALFOUNDRIES SINGAPORE PTE. LTD. |
发明人 |
ZHANG GUOWEI;LI YISUO;LI MING;PURAKH RAJ VERMA;SANFORD CHU SHAO-FU |
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