Hyper-frequency micro-switch i.e. radio frequency micro-electromechanical system switch, has membrane placed above dielectric layer that is deposited on central line, where dielectric layer consists of metal-insulator transition material

摘要

The micro-switch has a membrane placed above a dielectric layer that is deposited on a central line. The membrane is located at distance from the dielectric layer when voltage is applied between the membrane and the central line and engaged with the dielectric layer when voltage is not applied between membrane and central line. The dielectric layer is partially provided with a metal-insulator transition (MIT) material such as vanadium oxide, which is provided in the form of micro-columns and nanowires. The dielectric layer has hetero-structure composed of dielectric material in matrix form. An independent claim is also included for a method for manufacturing a hyper-frequency micro-switch.