MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE INCLUDING IMPLANTATION REGION FOR FORMING LOW RESISTANCE CONTACT IN EMBEDDED LAYER, AND RELEVANT DEVICE

摘要

PROBLEM TO BE SOLVED: To solve such a problem of activation anneal that although a damage occurring due to implantation of high energy ions into a semiconductor lattice can be repaired, the temperature at which significant lattice damage is possibly repaired may be higher than the temperature at which a material is dissociated under a normal ambient pressure, for some semiconductor materials.SOLUTION: The method of manufacturing a semiconductor device includes a step for forming a first semiconductor layer of first conductivity type having a first dopant concentration, and a step for forming a second semiconductor layer on the first semiconductor layer. The second semiconductor layer has a second dopant concentration lower than the first dopant concentration. Ions are implanted in the second semiconductor layer so as to form an implantation region of first conductivity type which extends to penetrate the second semiconductor layer and comes into contact with the first semiconductor layer. A first electrode is formed above an implantation region of second conductivity type, and a second electrode is formed above a non-implantation region of the second semiconductor layer. A relevant device is also provided.