NONVOLATILE SEMICONDUCTOR STORAGE DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device which has a wide memory window and a long data retention period.SOLUTION: A nonvolatile semiconductor storage device of an embodiment comprises: a semiconductor layer; a first insulation film formed on the semiconductor layer; a charge storage layer which is formed on the first insulation film and which has metal fine particles; a second insulation film formed on the charge storage layer; and a gate electrode formed on the second insulation film. A voltage is applied, in an operation of data writing, between the gate electrode and the semiconductor layer so as to cause the gate electrode to be relatively negative voltage and cause the charge storage layer to store positive charge.