发明名称 |
NON-PLANAR CAPACITOR AND METHOD OF FORMING THE NON-PLANAR CAPACITOR |
摘要 |
Disclosed herein are embodiments of non-planar capacitor. The non-planar capacitor can comprise a plurality of fins above a semiconductor substrate. Each fin can comprise at least an insulator section on the semiconductor substrate and a semiconductor section, which has essentially uniform conductivity, stacked above the insulator section. A gate structure can traverse the center portions of the fins. This gate structure can comprise a conformal dielectric layer and a conductor layer (e.g., a blanket or conformal conductor layer) on the dielectric layer. Such a non-planar capacitor can exhibit a first capacitance, which is optionally tunable, between the conductor layer and the fins and a second capacitance between the conductor layer and the semiconductor substrate. Also disclosed herein are method embodiments, which can be used to form such a non-planar capacitor and which are compatible with current state of the art multi-gate non-planar field effect transistor (MUGFET) processing.
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申请公布号 |
US2013256835(A1) |
申请公布日期 |
2013.10.03 |
申请号 |
US201213434964 |
申请日期 |
2012.03.30 |
申请人 |
DI SARRO JAMES P.;GAUTHIER, JR. ROBERT J.;LEE TOM C.;LI JUNJUN;MITRA SOUVICK;PUTNAM CHRISTOPHER S.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DI SARRO JAMES P.;GAUTHIER, JR. ROBERT J.;LEE TOM C.;LI JUNJUN;MITRA SOUVICK;PUTNAM CHRISTOPHER S. |
分类号 |
H01L29/92;H01L21/02 |
主分类号 |
H01L29/92 |
代理机构 |
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地址 |
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