发明名称 SEMICONDUCTOR DEVICE HAVING HIGH-K GATE INSULATION FILMS AND FABRICATING METHOD THEREOF
摘要 A semiconductor device having high-k gate insulation films and a method of fabricating the semiconductor device are provided. The semiconductor device includes a first gate insulation film on a substrate and the first gate insulation film includes a material selected from the group consisting of HfO2, ZrO2, Ta2O5, TiO2, SrTiO3 and (Ba,Sr)TiO3, and lanthanum (La). Additionally, the semiconductor device includes a first barrier film on the first gate insulation film, a first gate electrode on the first barrier film, and n-type source/drain regions in the substrate at both sides of the first gate electrode.
申请公布号 US2013299912(A1) 申请公布日期 2013.11.14
申请号 US201313833153 申请日期 2013.03.15
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM JU-YOUN;KIM YOUNG-HUN
分类号 H01L27/088;H01L21/02 主分类号 H01L27/088
代理机构 代理人
主权项
地址