| 摘要 |
A direct thermoelectric converter includes a condensing surface. The condensing surface conducts heat to a silicon matrix to cool the condensing surface to a temperature to precipitate a gas fraction from a flow of gas. The matrix includes a first layer of low recombination material fused to a first layer of high recombination material at a first n-type junction, the first layer high recombination material fused to a second layer of low recombination material at a p-type junction, the second layer of low recombination material fused to a second layer of high recombination material at a second n-type junction. Each of a positive and a negative terminal are affixed conductively to the silicon matrix thereby to supply a current of electrons at a supply voltage. A controller senses the current of electrons and selectively connects the direct thermoelectric converter to a load in response to the supply of electrons. |
