鳍式场效电晶体非依电性记忆体晶胞、阵列及制造方法,申请号TW099130169-传众专利搜索

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发明名称	鳍式场效电晶体非依电性记忆体晶胞、阵列及制造方法
摘要
申请公布号	TWI422040	申请公布日期	2014.01.01
申请号	TW099130169	申请日期	2010.09.07
申请人	超捷公司美国	发明人	胡耀文;同塔稣德　佩堤普
分类号	H01L29/788;H01L27/105	主分类号	H01L29/788
代理机构		代理人	恽轶群台北市松山区南京东路3段248号7楼;陈文郎台北市松山区南京东路3段248号7楼
主权项
地址	美国

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