MULTI-LEVEL CELL MEMORY

摘要

A multi-level cell memory includes a memory cell that stores two or more bits of information; a sensing circuit coupled to the memory cell; and a row buffer structure comprising a split page buffer having a first page buffer and a second page buffer. The sensing circuit operates to read from and write to the memory device, places a first bit in one of the first page buffer and the second page buffer, and places the second bit in one of the first page buffer and the second page buffer.