发明名称 |
Image sensors having multiple photoelectric conversion devices therein |
摘要 |
Image sensors include a second photoelectric conversion device disposed in a lower portion of a substrate and a first photoelectric conversion device extending between the secondary photoelectric conversion device and a light receiving surface of the substrate. Electrical isolation between the first and second photoelectric conversion devices is provided by a photoelectron barrier, which may be an optically transparent electrically insulating material. MOS transistors may be utilized to transfer photoelectrons generated within the first and second photoelectric conversion devices to a floating diffusion region within the image sensor. These transistors may represent one example of means for transferring photoelectrons generated in the first and second photoelectric conversion devices to a floating diffusion region in the substrate, in response to first and second gating signals, respectively. The first and second gating signals may be active during non-overlapping time intervals. |
申请公布号 |
US8625016(B2) |
申请公布日期 |
2014.01.07 |
申请号 |
US20100958799 |
申请日期 |
2010.12.02 |
申请人 |
FOSSUM ERIC;KIM SUK PIL;PARK YOON DONG;OH HOON SANG;BAE HYUNG JIN;YOON TAE EUNG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
FOSSUM ERIC;KIM SUK PIL;PARK YOON DONG;OH HOON SANG;BAE HYUNG JIN;YOON TAE EUNG |
分类号 |
H04N5/335;H01L21/00;H01L21/02;H01L31/062 |
主分类号 |
H04N5/335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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