| 摘要 |
PROBLEM TO BE SOLVED: To provide an ion implantation method and an ion implantation machine utilizing a variable aperture.SOLUTION: There is provided an aperture adjusting device which changes the shape of an ion beam, especially, changes the final shape of the ion beam nearby a substrate, and carries out ion implantation in the substrate with the ion beam having been shaped. The ion implantation in a different part of the substrate or a different substrate is performed with the ion beam having been shaped differently in a state in which a plurality of fixed apertures are not used or the ion beam is not re-adjusted at each time. Namely, different ion implantation can be performed with a specially-shaped ion beam neither at high cost nor through complicated operation. As compared with known techniques, the variable aperture is easily adjusted through machine operation, so an ion beam adjusting process is quickened to achieve an ion beam adjusting process for a specific ion beam for ion implantation. |
