发明名称 METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT
摘要 According to one embodiment, a method of manufacturing a magnetoresistive element includes a layered structure and a pair of electrodes, the layered structure including a cap layer, a magnetization pinned layer, a magnetization free layer, a spacer layer and a functional layer provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer and including an oxide, the method including forming a film including a base material of the functional layer, performing an oxidation treatment on the film using a gas containing oxygen in a form of at least one selected from the group consisting of molecule, ion, plasma and radical, and performing a reduction treatment using a reducing gas on the film after the oxidation treatment.
申请公布号 US2014153139(A1) 申请公布日期 2014.06.05
申请号 US201414176989 申请日期 2014.02.10
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TAKEO Akihiko;FUJI Yoshihiko;YUASA Hiromi;HARA Michiko;MURAKAMI Shuichi;FUKUZAWA Hideaki
分类号 G11B5/39 主分类号 G11B5/39
代理机构 代理人
主权项 1. A magnetoresistive element manufactured by a method and comprising a layered structure and a pair of electrodes allowing an electric current to flow through the layered structure in a thickness direction, the layered structure comprising: a cap layer;a magnetization pinned layer;a magnetization free layer provided between the cap layer and the magnetization pinned layer;a spacer layer provided between the magnetization pinned layer and the magnetization free layer; anda functional layer provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer and comprising an oxide containing at least one element selected from the group consisting of Zn, In, Sn, and Cd and at least one element selected from the group consisting of Fe, Co, and Ni; the method comprising: forming a film comprising a base material of the functional layer;performing an oxidation treatment on the film using a gas containing oxygen in a form of at least one selected from the group consisting of molecule, ion, plasma and radical; andperforming a reduction treatment using a reducing gas on the film after the oxidation treatment.
地址 Tokyo JP