发明名称 ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME
摘要 An array substrate includes an oxide semiconductor layer; an etch stopper including a first contact hole exposing each of both sides of the oxide semiconductor layer; source and drain electrodes spaced apart from each other with the oxide semiconductor layer therebetween; a first passivation layer including a contact hole exposing each of both ends of the oxide semiconductor layer and each of ends of the source and drain electrode that oppose the both ends of the oxide semiconductor layer, respectively; and a connection pattern at the second contact hole contacting both the oxide semiconductor layer and each of the source and drain electrodes.
申请公布号 US2014159034(A1) 申请公布日期 2014.06.12
申请号 US201313966507 申请日期 2013.08.14
申请人 LG DISPLAY CO., LTD. 发明人 Yang Joon-Young
分类号 H01L33/00 主分类号 H01L33/00
代理机构 代理人
主权项 1. An array substrate comprising: a gate electrode connected to a gate line; a gate insulating layer on the gate electrode; an oxide semiconductor layer on the gate insulating layer, exposing both sides of the gate insulating layer; an etch stopper on the oxide semiconductor layer and entirely over the substrate, the etch stopper including a first contact hole exposing each of both sides of the oxide semiconductor layer; a source electrode, a drain electrode and a pixel electrode on the etch stopper, wherein the source and drain electrodes are spaced apart from each other with the oxide semiconductor layer therebetween, wherein the pixel electrode is connected to the drain electrode; a first passivation layer on the source and drain electrodes and the pixel electrode and entirely over the substrate, the first passivation layer including a second contact hole which fully overlaps the first contact hole, has an area greater than the first contact hole, the second contact hole exposes each of both ends of the source and drain electrode that oppose the both ends of the oxide semiconductor layer, respectively; and a connection pattern contacting both the oxide semiconductor layer and the source and drain electrodes respectively.
地址 Seoul KR