| 摘要 |
PROBLEM TO BE SOLVED: To achieve a nitride semiconductor light-emitting element which has contact characteristics equivalent to those of a conventional nitride semiconductor light-emitting element without using a contact electrode formed of a material such as ITO or Ni.SOLUTION: The nitride semiconductor light-emitting element includes: a light-emitting layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer; a first contact layer which is in contact with the p-type nitride semiconductor layer and is constituted of a nitride semiconductor layer doped with a first impurity material at a higher concentration than the p-type nitride semiconductor layer; and a second contact layer which is in contact with the first contact layer, is doped with one or more second impurity materials selected from Zn, Cd, Be, Sr, Ca, and C, and is constituted of AlGaInN (0≤X≤1, 0≤Y≤1, 0≤Z≤1, and X+Y+Z=1). |
