| 发明名称 |
Bi-directional electrostatic discharge (ESD) protection circuit |
| 摘要 |
A structure is designed with an external terminal (100) and a reference terminal (102). A first transistor (106) is formed on a substrate. The first transistor has a current path coupled between the external terminal and the reference terminal. A second transistor (118) has a current path coupled between the external terminal and the substrate. A third transistor (120) has a current path coupled between the substrate and the reference terminal. |
| 申请公布号 |
US8916934(B2) |
申请公布日期 |
2014.12.23 |
| 申请号 |
US201313751381 |
申请日期 |
2013.01.28 |
| 申请人 |
Texas Instruments Incorporated |
发明人 |
Steinhoff Robert;Brodsky Jonathan;Vrotsos Thomas A. |
| 分类号 |
H01L23/62 |
主分类号 |
H01L23/62 |
| 代理机构 |
|
代理人 |
Neerings Ronald O.;Telecky, Jr. Frederick J. |
| 主权项 |
1. A circuit, comprising:
a first terminal; a second terminal; a third terminal; a device having a current path coupled between the first and second terminals; a first transistor having a current path coupled between the first terminal and the third terminal and having a control terminal coupled to the second terminal; and a second transistor having a current path coupled between the second terminal and the third terminal and having a control terminal coupled to the first terminal. |
| 地址 |
Dallas TX US |
