发明名称 DEVICE AND METHOD FOR PLASMA PROCESSING
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing device capable of securing processing uniformity in a substrate surface.SOLUTION: A plasma film deposition device 100 includes a mounted auxiliary plate 9 as a convex-shape part, on substantially all substrate-non-mounting region R2 of a lower electrode 5. The auxiliary plate 9 has a frame shape and is disposed in a manner to surround the whole of a rectangular substrate-mounting region R1. The auxiliary plate 9 is a detachable tabular member from the lower electrode 5, and is made of a dielectric, such as quartz, ceramics, heat-resistant and synthetic resin, or a conductor such as aluminum, aluminum alloy and stainless steel. The auxiliary plate 9 reduces or eliminates a level difference 80 between a substrate S and the lower electrode 5, thereby facilitating flowing of gas G toward corners of the substrate S.
申请公布号 JP2015005634(A) 申请公布日期 2015.01.08
申请号 JP20130130238 申请日期 2013.06.21
申请人 TOKYO ELECTRON LTD;SHARP CORP 发明人 DEMICHI YOSHIHIKO;KOHAMA NORIYOSHI;FUKUDA TOMOHIRO
分类号 H01L21/31;C23C16/455;C23C16/509;H05H1/46 主分类号 H01L21/31
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