| 发明名称 |
Ferromagnetic Material Sputtering Target Containing Chromium Oxide |
| 摘要 |
Provided is a ferromagnetic material sputtering target containing a matrix phase made of cobalt, or cobalt and chromium, or cobalt and platinum, or cobalt, chromium and platinum, and an oxide phase including at least a chromium oxide, wherein the sputtering target contains one or more types of Zr and W in a total amount of 100 wt ppm or more and 15000 wt ppm or less, and has a relative density of 97% or higher. An object of this invention is to provide a ferromagnetic material sputtering target containing chromium oxide with low generation of particles capable of maintaining high density and with uniformly pulverized oxide phase grains. |
| 申请公布号 |
US2015014155(A1) |
申请公布日期 |
2015.01.15 |
| 申请号 |
US201314380113 |
申请日期 |
2013.01.15 |
| 申请人 |
JX Nippon Mining & Metals Corporation |
发明人 |
Takami Hideo;Arakawa Atsutoshi |
| 分类号 |
H01J37/34;C23C14/14 |
主分类号 |
H01J37/34 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A ferromagnetic material sputtering target containing a matrix phase made of cobalt, or cobalt and chromium, or cobalt and platinum, or cobalt, chromium and platinum, and an oxide phase including at least a chromium oxide, wherein the ferromagnetic material sputtering target contains one or more types of Zr and W in a total amount equal to or more than 100 wt ppm and less than 15000 wt ppm, the chromium oxide being contained in an amount of 0.5 mol % or more and 10 mol % or less in Cr2O3 conversion, and wherein the sputtering target has a relative density of 97% or higher. |
| 地址 |
Tokyo JP |
