MIXED MODE PULSING ETCHING IN PLASMA PROCESSING SYSTEMS

摘要

A method for processing substrate in a chamber, which has at least one plasma generating source, a reactive gas source for providing reactive gas into the interior region of the chamber, and a non-reactive gas source for providing non-reactive gas into the interior region, is provided. The method includes performing a mixed-mode pulsing (MMP) preparation phase, including flowing reactive gas into the interior region and forming a first plasma to process the substrate that is disposed on a work piece holder. The method further includes performing a MMP reactive phase, including flowing at least non-reactive gas into the interior region, and forming a second plasma to process the substrate, the second plasma is formed with a reactive gas flow during the MMP reactive phase that is less than a reactive gas flow during the MMP preparation phase. Perform the method steps a plurality of times.

主权项

1. A plasma processing system for processing a substrate using mixed-mode pulsing, the plasma processing system comprising:
a substrate; a plasma processing chamber for processing the substrate; a work piece holder within an interior region of the plasma processing chamber; at least one plasma generating source; at least one reactive gas source for providing at least a first reactive gas into the interior region of the plasma processing chamber; at least one non-reactive gas source for providing at least a first non-reactive gas into the interior region of the plasma processing chamber; and a tangible computer-readable medium storing computer-readable instructions for: (a) disposing the substrate on the work piece holder within the interior region; (b) performing a mixed-mode pulsing (MMP) preparation phase, including flowing the first reactive gas into the interior region,
exciting the first reactive gas with a first RF signal having a first RF frequency, the first RF signal representing an RF signal having chirped frequencies, andforming a first plasma with at least the first reactive gas to process the substrate with the first plasma; (c) performing a mixed mode pulsing (MMP) reactive phase, including flowing at least the first non-reactive gas into the interior region, and
forming a second plasma with at least the first non-reactive gas to process the substrate with the second plasma, wherein the second plasma is formed with a flow of the first reactive gas during the MMP reactive phase that is less than a flow of the first reactive gas during the MMP preparation phase; and (d) repeating steps (b) and (c) for a plurality of times.