PATTERN-FORMING MATERIAL AND PATTERN FORMATION METHOD

摘要

Pattern-forming material useful in producing highly accurate submicron patterns having unusually high aspect ratios at superior resolutions are obtained by using a solvent-soluble polyorganosiloxane having SiO4/2 units and at least one other organosiloxane unit which contains a high energy radiation sensitive group. The polyorganosiloxane has a softening temperature greater than room temperature.