| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for growing a crystal by which an electrically conductive GaAs substance can be used for manufacturing a light-producing element of three-family represented by InxGa(1x)N (0<=X<=1). SOLUTION: In a vapor phase growth method, a crystal is growth while a substrate is heated up to 900 deg.C or more. When a GaAS crystal as growing substrate is heated up to the temperature, arsine gas is sprayed on the top of the substrate. If the growing substrate is heated from the room temperature, arsine gas is introducing at the time when the temperature of the substrate exceeds approximately 600 deg.C. In a process of growing a target crystal on the growing substrate, no arsine gas is introduced which has no bearing on the target metal. |
