发明名称 |
Semiconductor Component and an Operating Method for a Protective Circuit Against Light Attacks |
摘要 |
A semiconductor component includes a semiconductor substrate, and a doped well having a well terminal and a transistor structure having at least one potential terminal formed in the semiconductor substrate. The transistor structure has a parasitic thyristor, and is at least partly arranged in the doped well. The potential terminal and the well terminal are connected via a resistor. |
申请公布号 |
US2015028917(A1) |
申请公布日期 |
2015.01.29 |
申请号 |
US201414512686 |
申请日期 |
2014.10.13 |
申请人 |
Infineon Technologies AG |
发明人 |
Kuenemund Thomas;Tischendorf Dennis;Weder Uwe |
分类号 |
H03K19/177;H01L27/144;H01L23/552 |
主分类号 |
H03K19/177 |
代理机构 |
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代理人 |
|
主权项 |
1. A semiconductor component, comprising:
a semiconductor substrate; a doped well formed in the semiconductor substrate, the doped well having a well terminal; a transistor structure formed in the semiconductor substrate, the transistor structure having a potential terminal and a parasitic thyristor partly arranged in the doped well; and a resistor connecting the potential terminal and the well terminal, wherein light attack information is present at the well terminal during a light attack on the semiconductor component, the light attack information indicating the degree of the light attack. |
地址 |
Neubiberg DE |