发明名称 |
INSPECTION OF A LITHOGRAPHIC MASK THAT IS PROTECTED BY A PELLICLE |
摘要 |
A system and a method for evaluating a lithography mask, the system may include: (a) electron optics for directing primary electrons towards a pellicle that is positioned between the electron optics and the lithography mask; wherein the primary electrons exhibit an energy level that allows the primary electrons to pass through the pellicle and to impinge on the lithographic mask; (b) at least one detector for detecting detected emitted electrons and for generating detection signals; wherein detected emitted electrons are generated as a result of an impingement of the primary electrons on the lithographic mask; and (c) a processor for processing the detection signals to provide information about the lithography mask |
申请公布号 |
US2015028203(A1) |
申请公布日期 |
2015.01.29 |
申请号 |
US201313948975 |
申请日期 |
2013.07.23 |
申请人 |
Applied Materials Israel, Ltd. |
发明人 |
Litman Alon;Dodzin Nir Ben-David;Karabekov Albert;Goldenshtein Alex |
分类号 |
G03F1/86;H01J37/26 |
主分类号 |
G03F1/86 |
代理机构 |
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代理人 |
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主权项 |
1. A method for evaluating lithography mask, the method comprises:
directing by electron optics, primary electrons towards a pellicle that is positioned between the electron optics and the lithography mask; wherein the primary electrons exhibit an energy level that allows the primary electrons to pass through the pellicle and to impinge on the lithographic mask; detecting, by at least one detector, detected emitted electrons and generating detection signals; wherein detected emitted electrons are generated as a result of an impingement of the primary electrons on the lithographic mask; and processing, by a processor, the detection signals to provide information about the lithography mask. |
地址 |
Park Rabin IL |