发明名称 INSPECTION OF A LITHOGRAPHIC MASK THAT IS PROTECTED BY A PELLICLE
摘要 A system and a method for evaluating a lithography mask, the system may include: (a) electron optics for directing primary electrons towards a pellicle that is positioned between the electron optics and the lithography mask; wherein the primary electrons exhibit an energy level that allows the primary electrons to pass through the pellicle and to impinge on the lithographic mask; (b) at least one detector for detecting detected emitted electrons and for generating detection signals; wherein detected emitted electrons are generated as a result of an impingement of the primary electrons on the lithographic mask; and (c) a processor for processing the detection signals to provide information about the lithography mask
申请公布号 US2015028203(A1) 申请公布日期 2015.01.29
申请号 US201313948975 申请日期 2013.07.23
申请人 Applied Materials Israel, Ltd. 发明人 Litman Alon;Dodzin Nir Ben-David;Karabekov Albert;Goldenshtein Alex
分类号 G03F1/86;H01J37/26 主分类号 G03F1/86
代理机构 代理人
主权项 1. A method for evaluating lithography mask, the method comprises: directing by electron optics, primary electrons towards a pellicle that is positioned between the electron optics and the lithography mask; wherein the primary electrons exhibit an energy level that allows the primary electrons to pass through the pellicle and to impinge on the lithographic mask; detecting, by at least one detector, detected emitted electrons and generating detection signals; wherein detected emitted electrons are generated as a result of an impingement of the primary electrons on the lithographic mask; and processing, by a processor, the detection signals to provide information about the lithography mask.
地址 Park Rabin IL