发明名称 PSEUDO DUAL-PORTED SRAM
摘要 A memory is described which includes a main memory array made up of multiple single-ported memory banks connected by parallel read and write buses, and a sideband memory equivalent to a single dual-ported memory bank. Control logic and tags state facilitates a pattern of access to the main memory and the sideband memory such that the memory performs like a fully provisioned dual-ported memory capable of reading and writing any two arbitrary addresses on the same cycle.
申请公布号 EP2368194(A4) 申请公布日期 2015.01.28
申请号 EP20090837847 申请日期 2009.12.11
申请人 INTEL CORPORATION 发明人 DAMA, JONATHAN;LINES, ANDREW
分类号 G06F15/167;G06F12/06;G06F13/00 主分类号 G06F15/167
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