发明名称 微細パターンマスクおよびその製造方法、ならびにそれを用いた微細パターンの形成方法
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a resin composition for forming a fine pattern capable of easily manufacturing a fine pattern having excellent line edge roughness with high mass-productivity, and to provide a method for forming a fine pattern. <P>SOLUTION: There is provided a resin composition comprising a silicon-containing polymer selected from the group consisting of polysilazane or polysilsesquioxane, a silicon-free organic polymer such as polystyrene and a solvent capable of dissolving them. There is also provided a method for forming a fine pattern according to the present invention comprising the steps of: forming a first protruding pattern on a film to be processed; forming a spacer formed from the resin composition at a sidewall of a protruding part of the protruding pattern; and forming a fine pattern by using the spacer or a resin layer disposed around the spacer as a mask. <P>COPYRIGHT: (C)2013,JPO&INPIT</p>
申请公布号 JP5661562(B2) 申请公布日期 2015.01.28
申请号 JP20110123425 申请日期 2011.06.01
申请人 发明人
分类号 G03F7/40;H01L21/027 主分类号 G03F7/40
代理机构 代理人
主权项
地址
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