| 摘要 |
PROBLEM TO BE SOLVED: To provide a production method of a SiC substrate capable of preventing generation of excessive and useless stocks of SiC wafers, and having an epitaxial layer.SOLUTION: A method for producing one by one a SiC substrate 5 having an epitaxial layer includes the steps of: growing an epitaxial layer 3 on a seed crystal substrate 1; growing the SiC substrate 5; and further includes detaching the obtained SiC substrate 5 having the epitaxial layer 3 from the seed crystal substrate 1. |
