Method of depositing dielectric films using microwave plasma

摘要

Embodiments of the invention describe a method for forming dielectric films for semiconductor devices. The method includes providing a substrate in a process chamber containing a microwave plasma source, introducing into the process chamber a non-metal-containing process gas including a deposition gas having a carbon-nitrogen intermolecular bond, forming a plasma from the process gas, and exposing the substrate to the plasma to deposit carbon-nitrogen-containing film on the substrate. In some embodiments, the carbon-nitrogen-containing film can include a CN film, a CNO film, a Si-doped CN film, or a Si-doped CNO film.

主权项

1. A method of forming a semiconductor device, comprising:
providing a substrate in a process chamber containing a microwave plasma source; introducing in the process chamber a non-metal-containing process gas including a gas having a carbon-nitrogen intermolecular bond; forming a plasma from the process gas; and exposing the substrate to the plasma to deposit a carbon-nitrogen (CN) film with carbon and nitrogen as the major constituents and wherein an electron temperature of the plasma is less than the bond energy of C—H bonds in the gas having a carbon-nitrogen intermolecular bond.