| 发明名称 | Wavelength-converting light emitting diode (LED) chip and LED device equipped with chip | ||
| 摘要 | A wavelength-converted light emitting diode (LED) chip is provided. The wavelength-converted LED chip includes an LED chip and a wavelength-converted layer. The LED chip emits light in a predetermined wavelength region. The wavelength-converted layer is formed of a resin containing phosphor bodies of at least one kind which convert a portion of the light emitted from the LED chip into light in a different wavelength region. The wavelength-converted layer is formed on an upper surface of the LED chip, and has a convex meniscus-shaped upper surface. | ||
| 申请公布号 | US8963187(B2) | 申请公布日期 | 2015.02.24 |
| 申请号 | US201414176981 | 申请日期 | 2014.02.10 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Kim Yong Tae;Lee Dong Yeoul |
| 分类号 | H01L33/50 | 主分类号 | H01L33/50 |
| 代理机构 | McDermott Will & Emery LLP | 代理人 | McDermott Will & Emery LLP |
| 主权项 | 1. A wavelength-converted light emitting diode (LED) chip comprising: an LED chip for emitting light in a predetermined wavelength region; a wavelength-converted layer including a resin that contains phosphors of at least one kind which convert a portion of the light emitted from the LED chip into light in a different wavelength region, disposed on an upper surface of the LED chip, and having a convex meniscus-shaped upper surface, whose boundary is defined by an edge of the upper surface of the LED chip such that entirety of the wavelength-converted layer is limited to the upper surface of the LED chip; and a surface modification layer disposed on the upper surface of the LED chip. | ||
| 地址 | Seoul KR | ||