| 摘要 |
A semiconductor nanocrystal including a core including ZnSe, ZnTe, ZnS, ZnO, or a combination comprising at least one of the foregoing, wherein the core has a diameter of about 2 nanometers to about 5 nanometers and an emitted light wavelength of about 405 nanometers to about 530 nanometers; and a first layer disposed on the core, the first layer including a Group III-V semiconductor, wherein the semiconductor nanocrystal has a full width at half maximum of an emitted light wavelength of less than or equal to about 60 nanometers. |
| 主权项 |
1. A semiconductor nanocrystal comprising:
a core comprising ZnSe, ZnTe, ZnS, ZnO, or a combination thereof, wherein the core has a diameter of about 2 nanometers to about 5 nanometers and an emitted light wavelength of about 405 nanometers to about 530 nanometers; a first layer disposed on the core, the first layer comprising AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, or a combination thereof and having a thickness of about 0.3 nanometers to about 2 nanometers; and a second layer disposed on the first layer, the second layer comprising a Group II-VI or a Group III-V semiconductor material, wherein a material of the second layer has a band gap energy which is greater than a band gap energy of a material of the first layer, wherein a material of the core has a band gap energy which is greater than the band gap energy of the material of the first layer, wherein the semiconductor nanocrystal does not comprise cadmium, and wherein the semiconductor nanocrystal has a full width at half maximum of an emitted light wavelength of less than or equal to about 60 nanometers. |
