| 摘要 |
<p>Disclosed is a sputtering system which generates plasma by electron cyclotron resonance (ECR) and forms an oxide thin film semiconductor layer. A sputtering system according to the present invention generates plasma by ECR of generating high density plasma and relatively high temperature environment, thereby forming a micro crystalline semiconductor layer having low resistance on a substrate. Therefore, a thermal process for a post process to obtain a semiconductor having low resistance is not required, and a thermal process is not required, so that costs can be reduced.</p> |
