| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching apparatus which enables the suppression of the reduction in etching rate when successively etching substrates by use of an etching gas containing fluorine, hydrogen and nitrogen, provided that the substrates each have a silicon-containing film thereon.SOLUTION: An etching apparatus 5 for etching a silicon-containing film on a substrate W comprises: a chamber 40; a substrate-setting mechanism 42 provided in the chamber 40; a gas-supply mechanism 43 for supplying an etching gas containing fluorine, hydrogen and nitrogen into the chamber 40; and an exhausting mechanism 44. The substrate-setting mechanism 42 has: a setting holder 91; temperature-regulation mechanisms 94 and 95 operable to regulate the temperature of a setting plane of the setting holder 91 to be a temperature of 50°C or below; and a heating member 99 operable to heat at least part of planes other than the setting plane of the setting holder 91 to a temperature 60-100°C. The setting holder 91 has a resin coating layer 98 formed on at least the setting plane. |
