| 发明名称 | Large array of upward pointing p-i-n diodes having large and uniform current | ||
| 摘要 | A monolithic three-dimensional memory array is provided that includes a first memory level and a second memory level disposed above or below the first memory level. The first memory level includes a plurality of vertically oriented p-i-n diodes that each include a bottom heavily doped p type region. The second memory level includes a plurality of vertically oriented p-i-n diodes that each include a bottom heavily doped n type region. Numerous other aspects are also provided. | ||
| 申请公布号 | US9025372(B2) | 申请公布日期 | 2015.05.05 |
| 申请号 | US201414249628 | 申请日期 | 2014.04.10 |
| 申请人 | SanDisk 3D LLC | 发明人 | Herner Scott Brad |
| 分类号 | G11C11/36;H01L45/00;B82Y10/00;G11C13/00;G11C17/16;H01L27/102;H01L27/24 | 主分类号 | G11C11/36 |
| 代理机构 | Vierra Magen Marcus LLP | 代理人 | Vierra Magen Marcus LLP |
| 主权项 | 1. A monolithic three-dimensional memory array comprising: a first memory level comprising a plurality of vertically oriented p-i-n diodes that each comprise a bottom heavily doped p-type region; and a second memory level comprising a plurality of vertically oriented p-i-n diodes that each comprise a bottom heavily doped n-type region, the second memory level disposed above or below the first memory level, wherein read currents of the p-i-n diodes of the first memory level are within an order of magnitude of one another. | ||
| 地址 | Milpitas CA US | ||