| 发明名称 |
Semiconductor Chip with Electrically Conducting Layer |
| 摘要 |
A semiconductor device includes a semiconductor chip having a first main surface, a second main surface opposite to the first main surface, and a side wall surface. An electrical contact area is exposed at the side wall surface of the semiconductor chip. An electrically conducting layer covers at least partially the second main surface and the electrical contact area. |
| 申请公布号 |
US2015145107(A1) |
申请公布日期 |
2015.05.28 |
| 申请号 |
US201314089971 |
申请日期 |
2013.11.26 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Ng Chee Yang |
| 分类号 |
H01L23/552;H01L23/00;H01L21/3205;H01L23/31;H01L21/56 |
主分类号 |
H01L23/552 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a semiconductor chip having a first main surface, a second main surface opposite to the first main surface, and a side wall surface; an electrical contact area exposed at the side wall surface; and an electrically conducting layer covering at least partially the second main surface and the electrical contact area. |
| 地址 |
Neubiberg DE |
