MANUFACTURING METHOD OF SILICON CARBIDE EPITAXIAL SUBSTRATE, SUBSTRATE BEARING MEMBER, AND SILICON CARBIDE SEMICONDUCTOR MANUFACTURING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon carbide epitaxial substrate having reduced crystal defect, a substrate bearing member used for the manufacturing method of the silicon carbide epitaxial substrate, and a silicon carbide semiconductor manufacturing device. ! SOLUTION: The manufacturing method of the silicon carbide epitaxial substrate includes a step (S10) for preparing a base substrate, a step (S20) for discharging the base substrate in the insulated state, and a step (S30) for epitaxially growing silicon carbide on the discharged base substrate after the discharging step (S20). ! COPYRIGHT: (C)2015,JPO&INPIT