Method of programming non-volatile memory device and non-volatile memory device using the same

摘要

A program method of a nonvolatile memory device according to example embodiments includes a operation (a) of detecting a level of a program voltage; and a operation (b) of providing a unselected word line voltage and a bit line precharge voltage having a variable level respectively according to the detected level of the program voltage.

主权项

1. A method of operating a nonvolatile memory device including a plurality of memory blocks, each of the plurality of memory blocks including multi-level memory cells coupled to word lines and bit lines, the method comprising:
performing a first program operation on selected memory cells coupled to a selected word line using a first Incremental Step Pulse Program (ISPP) scheme, the first program operation including,
applying a first pass voltage to an unselected word line during a first program period;applying a second pass voltage higher than the first pass voltage to the unselected word line during a second program period following the first program period; andapplying a third pass voltage higher than the second pass voltage to the unselected word line during a third program period following the second program period, wherein the first program period includes at least two program loops, each of the second program period and the third program period includes at least one program loop, and memory cells coupled to the unselected word line and the selected memory cells coupled to the selected word line are included in a same memory block among the plurality of memory blocks.