发明名称 |
Limiting circuit for a semiconductor transistor and method for limiting the voltage across a semiconductor transistor |
摘要 |
A limiting circuit for at least one semiconductor transistor. The circuit includes a limiting path which is coupled between a first power terminal and a second power terminal of the semiconductor transistor. The limiting path includes a limiting transistor. A node of the limiting path located between the limiting transistor and the second power terminal of the semiconductor transistor is coupled to a control terminal of the semiconductor transistor. A voltage source is coupled to the control terminal of the limiting transistor and is designed to apply a control voltage to said control terminal of the limiting transistor. The control voltage corresponds to a critical voltage for the voltage between the first power terminal and the second power terminal of the semiconductor transistor. The limiting transistor is switched to a conductive state when said critical voltage is exceeded at a power terminal of said limiting transistor. |
申请公布号 |
US9088159(B2) |
申请公布日期 |
2015.07.21 |
申请号 |
US201314013475 |
申请日期 |
2013.08.29 |
申请人 |
Robert Bosch GmbH |
发明人 |
Peuser Thomas |
分类号 |
H03K5/08;H02H3/20;H02H7/22;H03K17/0812;H03K17/082 |
主分类号 |
H03K5/08 |
代理机构 |
Michael Best & Friedrich LLP |
代理人 |
Michael Best & Friedrich LLP |
主权项 |
1. A limiting circuit for at least one semiconductor transistor, the circuit comprising:
a limiting path coupled between a first power terminal and a second power terminal of the semiconductor transistor and including a limiting transistor, wherein a node of the limiting path between the limiting transistor and the second power terminal of the semiconductor transistor is coupled to a control terminal of the semiconductor transistor; a voltage source, the voltage source comprising a boost converter which is designed to boost a supply voltage at an input terminal of the boost converter to the control voltage for the limiting transistor; wherein the voltage source is coupled to a control terminal of the limiting transistor, and wherein the voltage source is designed to supply a control voltage to the control terminal of the limiting transistor, the control voltage corresponding to a critical voltage for the voltage between the first power terminal and the second power terminal of the semiconductor transistor; and wherein the limiting transistor is switched to the conductive state when the critical voltage is exceeded at a power terminal of the limiting transistor. |
地址 |
Stuttgart DE |