发明名称 LEVEL SHIFT CIRCUIT AND SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a level shift circuit and a semiconductor device capable of making a voltage higher after a level shift while suppressing an increase in a circuit scale.SOLUTION: A level shift circuit includes: a first transistor and a second transistor to the first current end and the back gate of each which a second voltage is applied; a third transistor to the gate of which a first voltage is applied, to the first current end and the back gate of which a second current end of the first transistor and a gate of the second transistor are connected, and to the second current end of which a first line is connected; a fourth transistor to the gate of which the first voltage is applied, to the first current end and the back gate of which a second current end of the second transistor and a gate of the first transistor are connected, and to the second current end of which a second line is connected; a fifth transistor which becomes one state of an on-state and off-state according to an input signal, and applies a ground voltage to the first line in the case of the on-state; and a sixth transistor which becomes the other state of the on-state or off-state according to the input signal, and applies the ground voltage to the second line in the case of the on-state.</p>
申请公布号 JP2015142210(A) 申请公布日期 2015.08.03
申请号 JP20140013434 申请日期 2014.01.28
申请人 LAPIS SEMICONDUCTOR CO LTD 发明人 OGAWA JUNYA
分类号 H03K19/0185;H01L21/822;H01L27/04 主分类号 H03K19/0185
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