| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a trench gate semiconductor device which has reduced capacitance between a gate and a collector and which does not cause a snapback phenomenon occurring in output characteristics.SOLUTION: A semiconductor device comprises: a collector region; a drift region arranged on the collector region; a base region arranged on a top face of the base region; a wall surface insulation film arranged on a bottom face and lateral faces of a trench which extends from a top face of the source region and pierces the source region and the base region to reach the drift region and has a trench width of 3-20μm; a bottom electrode arranged on the wall surface insulation film at the bottom face of the trench; a bottom insulation film which is arranged on the bottom electrode inside the trench and has a film thickness thicker than a film thickness of the wall surface insulation film arranged at the bottom surface of the trench; and a gate electrode which is opposite to the base region across the wall surface insulation film arranged on the lateral face of the trench and arranged on the bottom insulation film inside the trench.</p> |
