发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which inhibits immersion of moisture from around a pad electrode of the semiconductor device having a back side illumination photoelectric conversion element to the inside of the semiconductor device.SOLUTION: A semiconductor device comprises a chip region including a back side illumination photoelectric conversion element, a mark-like appearance part MK, a pad electrode PA and a connection part SR. The mark-like appearance part MK includes an insulation film IF which covers an entire lateral face of a trench TH2 formed in a semiconductor substrate SI. The pad electrode PA is arranged at a position overlapping the mark-like appearance part MK. The connection part SR connects the pad electrode PA and the mark-like appearance part MK. At least a part of the pad electrode PA on the side of the other principal surface S2 of the semiconductor substrate SI is exposed by an opening TH which extends from the side of the other principal surface S2 of the semiconductor substrate SI to reach the pad electrode PA. The mark-like appearance part MK and the connection part SR are arranged so as to surround at least a part of a periphery of the opening TH in planar view.
申请公布号 JP2015162640(A) 申请公布日期 2015.09.07
申请号 JP20140038447 申请日期 2014.02.28
申请人 RENESAS ELECTRONICS CORP 发明人 TERADA TAKASHI;HORI SHINYA
分类号 H01L27/146;H01L21/3205;H01L21/768;H01L23/522;H01L27/14 主分类号 H01L27/146
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