发明名称 |
Process for producing bismuth-antimony single-crystal semimetals |
摘要 |
<p>The invention relates to the semimetal production technology, in particular to processes for producing single-crystal semimetals from semiconductors.The process for producing bismuth-antimony single-crystal semimetals comprises the smooth elastic extension of a bismuth-antimony single-crystal semiconductor wire with the antimony concentration of 7.5 at. % using an extension device, while concomitantly measuring the electrical resistance of the wire at the room temperature to the attainment of plastic extension.</p> |
申请公布号 |
MD886(Z) |
申请公布日期 |
2015.09.30 |
申请号 |
MDS20130055 |
申请日期 |
2013.03.21 |
申请人 |
INSTITUTUL DE INGINERIE ELECTRONICA SI NANOTEHNOLOGII "D. GHITU" AL ASM |
发明人 |
NIKOLAEVA ALBINA;BODIUL PAVEL;KONOPKO LEONID;POPOV ION;MOLOSNIC EVGHENII |
分类号 |
C30B33/00;C01G29/00;C01G30/00;G01N27/00;G01N27/02 |
主分类号 |
C30B33/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|