| 摘要 |
<p>The invention relates to a method for measuring the two-dimensional electron gas current and two-dimensional hole gas current and the concentration of two-dimensional gas in electrons depending on the gate voltage and source-drain voltage and on the magnetic induction of an external magnetic field applied perpendicular to the source-drain current, by using a device made by integration of a GaN LED with a quantum well, in series with a MOSC-HEMT GaN, and integration of a LED of the same type as the first one, connected to two lateral electrodes on the 25 nm-long spatial load portion and application of a magnetic field perpendicular on the spatial load area and on the direction of the two electrodes, and measurement of the intensity of the light emitted by the two LEDs.</p> |
