发明名称 Integrated circuit with precision current source
摘要 An integrated circuit with precision current source includes a first MOSFET, a second MOSFET, an op-amp and a resistor formed on a common semiconductor substrate. The first MOSFET is characterized by a first multiplier (xM1) and the second MOSFET is characterized by a second multiplier (xM2) where a ratio of xM2 to xM1 is greater than one. An inverting input of the op-amp is coupled to a drain of the first MOSFET and an output of the op-amp is coupled to a gate of the first MOSFET. A negative feedback circuit limits a rise in output current under low output voltage conditions.
申请公布号 US9148140(B1) 申请公布日期 2015.09.29
申请号 US201414170557 申请日期 2014.01.31
申请人 Maxim Integrated Systems, Inc. 发明人 Tanase Gabriel E.
分类号 H03K17/56;H03K17/687;H05B33/08 主分类号 H03K17/56
代理机构 TIPS Group 代理人 TIPS Group
主权项 1. A method for providing high current with low dropout and current limiting comprising: splitting an output current at a current output node into a first current which flows through a series connection of a first MOSFET and a sensing resistor to ground and a second current which flows through a second MOSFET to ground, where the second current is greater than the first current; maintaining a first gate-to-source voltage at the first MOSFET which is substantially equal to a second gate-to-source voltage at the second MOSFET, wherein an output of an operational amplifier (op-amp) is directly connected to a gate of the first MOSFET, a current source is directly connected between a gate of the second MOSFET and ground, and a resistor is directly connected between the output of the op-amp and the second MOSFET; and using negative feedback to limit a current flowing through the second MOSFET.
地址 San Jose CA US
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