| 发明名称 | Semiconductor light-emitting element, light source head, and image forming apparatus | ||
| 摘要 | A semiconductor light-emitting element formed of a semiconductor layer includes a multilayer reflecting mirror, a light-emitting layer, a resonator, and a phase shift layer. The multilayer reflecting mirror is formed on a substrate. The light-emitting layer is formed on the multilayer reflecting mirror. The resonator uses the multilayer reflecting mirror as a lower reflecting mirror and resonates light emitted from the light-emitting layer. The phase shift layer shifts a phase of a resonance spectrum of the resonator to generate a standing wave having plural principal modes. | ||
| 申请公布号 | US9147817(B2) | 申请公布日期 | 2015.09.29 |
| 申请号 | US201314028674 | 申请日期 | 2013.09.17 |
| 申请人 | FUJI XEROX CO., LTD. | 发明人 | Fukunaga Hideki |
| 分类号 | B41J2/385;H01L33/50;G03G15/04 | 主分类号 | B41J2/385 |
| 代理机构 | Sughrue Mion, PLLC | 代理人 | Sughrue Mion, PLLC |
| 主权项 | 1. A semiconductor light-emitting element formed of a semiconductor layer, the semiconductor light-emitting element comprising: a multilayer reflecting mirror formed on a substrate; a light-emitting layer formed on the multilayer reflecting mirror; a resonator that uses the multilayer reflecting mirror as a lower reflecting mirror and that resonates light emitted from the light-emitting layer; and a phase shift layer that that shifts a phase of a resonance spectrum of the resonator to generate a standing wave having a plurality of principal modes. | ||
| 地址 | Tokyo JP | ||