Semiconductor devices having back side bonding structures

摘要

Semiconductor devices are provided including an internal circuit on a front side of a substrate, the substrate defining a through-silicon via (TSV) structure extending vertically therein; a back side insulating layer on a back side of the substrate; and a back side bonding structure on the back side insulating layer. The TSV structure includes a front side end on a front side of the substrate and contacts the internal circuit and a back side end extending toward a back side of the substrate. The back side bonding structure includes a back side bonding interconnection portion on the back side insulating layer defining a back side bonding via hole therein and a back side bonding via plug portion in the contact plug hole in the back side insulating layer connected to a back side end of the TSV structure.

主权项

1. A semiconductor device comprising:
an internal circuit on a front side of a substrate, the substrate defining a through-silicon via (TSV) structure extending vertically therein; a back side insulating layer on a back side of the substrate; and a back side bonding structure on the back side insulating layer, wherein the TSV structure includes a front side end on a front side of the substrate and contacts the internal circuit and a back side end extending toward the back side of the substrate; wherein the back side bonding structure comprises a back side bonding interconnection portion on the back side insulating layer defining a back side bonding via hole therein and a back side bonding via plug portion in the back side bonding via hole in the back side insulating layer connected to the back side end of the TSV structure; wherein the back side bonding structure includes a back side bonding interconnection layer and a back side bonding barrier layer; wherein the TSV structure includes a TSV core, a TSV barrier layer surrounding the TSV core, and a TSV liner surrounding the TSV barrier layer, the TSV barrier layer completely surrounding a side and a back side end of the TSV core, and the TSV liner entirely surrounding a side of the TSV barrier layer and partially exposing the TSV barrier layer on the back side end of the TSV core; and wherein the exposed TSV barrier layer is in direct contact with the back side bonding barrier layer.