| 发明名称 | Method of driving nonvolatile memory devices | ||
| 摘要 | A method of driving a nonvolatile memory device, includes; forward shifting threshold voltages of nonvolatile memory cells by executing a first program loop with respect to the nonvolatile memory cells, and thereafter, reverse shifting the threshold voltages of the nonvolatile memory cells, and again forward shifting the threshold voltages of the nonvolatile memory cells by executing a second program loop with respect to the nonvolatile memory cells. | ||
| 申请公布号 | US9147477(B2) | 申请公布日期 | 2015.09.29 |
| 申请号 | US201414446351 | 申请日期 | 2014.07.30 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Kwak Dong-Hun;Park Ki-Tae |
| 分类号 | G11C16/06;G11C16/24;G11C16/26;G11C16/34;G11C16/10 | 主分类号 | G11C16/06 |
| 代理机构 | Volentine & Whitt, PLLC | 代理人 | Volentine & Whitt, PLLC |
| 主权项 | 1. A method of driving a nonvolatile memory device, comprising: forward shifting threshold voltages of nonvolatile memory cells by executing a first program loop with respect to the nonvolatile memory cells; and thereafter, reverse shifting the threshold voltages of the nonvolatile memory cells; and again forward shifting the threshold voltages of the nonvolatile memory cells by executing a second program loop with respect to the nonvolatile memory cells. | ||
| 地址 | Suwon-si, Gyeonggi-do KR | ||